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| IGBT with Diode IXSN 35N100U1 VCES IC25 VCE(sat) = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 1 Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC VISOL TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient T C = 25C T C = 90C T C = 25C, 1 ms V GE = 15 V, TVJ = 125C, RG = 22 Clamped inductive load, L = 30 H V GE = 15 V, VCE = 0.6 * V CES, TJ = 125C RG = 22 , non repetitive T C = 25C 50/60 Hz IISOL 1 mA t = 1 min t=1s Maximum Ratings 1000 1000 20 30 38 25 50 ICM = 50 @ 0.8 VCES 10 205 2500 3000 -40 ... +150 150 -40 ... +150 V A V V A A A A s W V~ V~ C C C miniBLOC, SOT-227 B 1 2 4 3 1 = Emitter, 2 = Gate, 3 = Collector 4 = Kelvin Emitter Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 5 TJ = 25C TJ = 125C 8 750 15 500 3.5 V V A mA nA V Features International standard package miniBLOC (ISOTOP) compatible Isolation voltage 3000 V~ 2nd generation HDMOSTM process - for high short circuit SOA Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - short trr and IRM Low collector-to-case capacitance (< 50 pF) - reducesd RFI Low package inductance (< 10 nH) - easy to drive and to protect q q q q q q q q BVCES VGE(th) I CES I GES VCE(sat) IC IC = 6 mA, VGE = 0 V = 10 mA, VCE = VGE V CE = 0.8 * VCES V GE = 0 V V CE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies q q q q q q q q Advantages Space savings Easy to mount with 2 screws High power density 93005C (7/94) IXYS reserves the right to change limits, test conditions and dimensions. (c) IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSN 35N100U1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10 20 300 4.5 VCE = 25 V, VGE = 0 V, f = 1 MHz 0.5 0.09 180 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 125C IC = IC90, VGE = 15 V, VCE = 0.6 * VCES, Ron = 6.8 , Roff = 22 Remarks: Switching times may increase for VCE (Clamp) > 0.6 * VCES, higher TJ or increased RG 45 120 80 150 800 2000 3.2 6.8 S A nF nF nF nC nC nC Dim. Millimeter Min. Max. 31.5 7.8 4.0 4.1 4.1 14.9 30.1 38.0 11.8 8.9 0.75 12.6 25.2 1.95 31.7 8.2 4.3 4.3 15.1 30.3 38.2 12.2 9.1 0.85 12.8 25.4 2.05 5.0 Inches Min. 1.241 0.307 0.158 0.162 0.162 0.587 1.186 1.497 0.465 0.351 0.030 0.496 0.993 0.077 Max. 1.249 0.323 0.169 0.169 0.595 1.193 1.505 0.481 0.359 0.033 0.504 1.001 0.081 0.197 miniBLOC, SOT-227 B gfs I C(on) Cies C oes C res Qg Q ge Q gc td(on) tri td(off) tfi Eon Eoff RthJC RthCK IC = IC90; VCE = 20 V, Pulse test, t 300 s, duty cycle d 2 % VGE = 15 V M4 screws (4x) supplied ns ns ns ns mJ mJ 0.61 K/W A B C D E F G H J K L M N O P 0.05 K/W Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.3 33 150 V A ns IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF /dt = 480 A/s TJ = 125C, VR = 360 V 0.7 K/W IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSN 35N100U1 250 IC 200 A TJ = 25C 15 V 150 A IC 120 TJ = 25C 15 V 13 V 10 V VCE(sat) TJ = 25C IC = 12.5 A IC = 25 A IC = 50 A 8 13 V 150 90 11 V 6 100 11 V 60 4 50 9V 30 9V 2 0 0 Fig. 1 Typ. 0 5 10 V CE 15 V 20 0 Fig. 2 0 2 4 VCE 6 V8 6 Fig. 3 8 10 12 VGE 14 V 16 output characteristics Typ. output characteristics Typ. on-state characteristics 1.2 VCE(sat) norm . 350 IC 300 A 250 1.2 TJ = 25C VCE = 30 V VGE (th ) nor m . IC = 10 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 1.1 1.0 200 150 IC = 50 A IC = 25 A IC = 12.5 A 0.9 100 50 0.8 0.7 -50 Fig. 4 0 0 50 TJ 100 C 150 4 6 8 10 12 VGE 14 V 16 Fig. 5 Typ. transfer 0 50 TJ 100 C 150 Typ. temp. dependence of VCE(sat) characteristics Fig. 6 Typ. temp. dependence of norm. VGE(th) 16 V 14 V GE 12 10 8 6 4 2 0 0 Fig. 7 IG = 40 mA IC = 1 A VCE = 25 V 10 nF Cies 100 A 10 IC TJ = 125C dV/dt < 6 V/ns RG = 22 C 1 Coes 1 Cres 0.1 0.1 50 100 QG 150 nC 200 0 Fig. 8 Typ. 0.01 5 10 15 VCE 20 V 25 Fig. 9 0 200 400 600 800 V 1000 VCE Typ. turn-on gate charge characteristics, VGE = f(QG) capacitances Reverse biased safe operating area (c) IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSN 35N100U1 10 mJ 8 IC = 50 A IC = 25 A 50 IRM A 40 IRM IRM 30 14 mJ 12 10 Eoff 8 6 4 IC = 50 A IC = 25 A IC = 12.5 A 6 Eon 4 IRM 20 2 IC = 12.5 A 10 2 0 0 25 50 75 100 TJ 125 C 150 0 0 Fig. 11 0 Fig. 10 25 50 75 100 TJ 125 C 150 Typ. turn-on energy per pulse Typ. turn-off energy per pulse 10 mJ 8 IRM 65,5 A 50 14 mJ 12 IC = 50 A IRM 6 Eon 4 IRM IC = 50 A IC = 25 A IRM 37.5 10 8 Eoff 6 IC = 12.5 A IC = 25 A 25 4 2 IC = 12.5 A 12.5 2 0 0 10 20 30 40 RGon 50 0 0 Fig. 13 0 Fig. 12 10 20 30 40 RGoff 50 Typ. turn-on energy per pulse 1 K/W Typ. turn-off energy per pulse Diode IGBT Single pulse 0.1 ZthJC 0.01 0.0001 Fig. 14 0.001 0.01 0.1 1 t s 10 Forward characteristic of reverse diode Fig. 15 Transient thermal resistance junction to case of IGBT and Diode IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 (c) IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 |
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